Thursday 23 October 2014
In a joint initiative of the universities of Delft, Nijmegen, Groningen and the University of Twente, headed by Harold Zandvliet, we received a FOM grant to realize, study and understand two-dimensional semiconductor structures made from silicon, germanium of phosphor, in order to ultimately produce a field-effect transistor.
Within the PIN-group we recently demonstrated the growth of germanene on a Ge(110) and we also have ample experience with the formation of silicene. Click here for a description for a wider audience (in Dutch).
